材料物理与化学系

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材料系 材加系 材物系 无机系 粉末冶金与先进陶瓷研究所

 

姓    名: 滕蛟
所在系所: 材物系
职    务: 干部
职    称: 副教授
通信地址: 北京市海淀区学院路30号北京科技大学材料学院
邮    编: 100083
办公地点:
电    话: 010-62334950
邮    箱: tengjiao@mater.ustb.edu.cn
传    真:

    磁性薄膜材料及器件、拓扑量子材料、半导体材料及器件、低维材料量子输运的数值计算等。

    2003年于北京科技大学获博士学位

    本科生课程:《固体物理基础》、《固体物理(专题)》、《量子力学》,《“老子”启》(全校公选课)

    1. Yu Wu, Qixun Guo, Qi Zheng, Xiulan Xu, Tao Liu, Yang Liu, Yu Yan, Dongwei Wang, Shibing Long, Lijin Wang, Shanwu Yang, Jiao Teng, Shixuan Du, and Guanghua Yu, Stabilizing the Fermi Level of Cr-Doped Magnetic Topological Insulators by Al Passivation, the journal of physical chemistry C , 2019.1.25, 123: 2823~2825

    2. Qixun GuoYu WuLongxiang XuYan GongYunbo OuYang LiuLeilei LiJiao TengYu YanGang HanDongwei WangLihua WangShibing LongBowei ZhangXun CaoShanwu YangXuemin WangYizhong HuangTao LiuGuanghua YuKe He, Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering, arXiv:1901.02611

    3. Lihua Wang, Jiao Teng, Xuechao Sha, Jin Zou, Ze Zhang, and Xiaodong Han“Plastic Deformation through Dislocation Saturation in Ultrasmall Pt Nanocrystals and Its in Situ Atomistic Mechanisms”, NANO letters., 2017.

    4. Lihua Wang , Pengfei Guan, Jiao Teng, Xiaodong Han, New twinning route in face-centered cubic nanocrystalline metals, Nature Communications 8(1), 2017

    5. LihuaWang , Tianjiao Xin , Deli Kong , Xinyu Shu , Yanhui Chen , Hao Zhou , Jiao Teng , Ze ZhangJin Zou , Xiaodong Han, “In situ observation of stress induced grain boundary migration in nanocrystalline gold”, Scripta Materialia, 2017.

    6. Yu Li , Meiyun Zhang , Shibing Long , Jiao Teng, Qi Liu , Hangbing Lv, Enrique Miranda, Jordi Suñé, Ming Liu,”Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator”, SCIENTIFIC REPORTS, 2017

    7. Leilei Li , Yang Liu , Jiao Teng , Shibing Long , Qixun Guo , Meiyun Zhang , Yu Wu, Guanghua Yu ,Qi Liu , Hangbing Lv and Ming Liu, “Anisotropic Magnetoresistance of Nanoconductive Filament in Co/HfO2/Pt Resistive Switching Memory”, Nanoscale Research Letters (2017) 12:210 

    8. Shao-Long Jiang , Guang Yang , Jiao Teng , Qi-Xun Guo , Yi-Wei Liu , Xu-Jing Li , Guang-Hua Yu, “Effects of HfO2/Co interface and Co/HfO2 interface on anomalous Hall behavior in perpendicular Co/Pt multilayers” Journal of Magnetism and Magnetic Materials 433 (2017)42–46

    9. Shao-Long Jiang, Guang Yang, Jiao Teng, Qi-Xun Guo, Lei-Lei Li, Guang-Hua Yu, Interface-engineered spin-dependent transport in perpendicularCo/Pt multilayersShao” Applied Surface Science 387 (2016) 375–378

    10. Yang Li, Shibing Long, Yang Liu, Chen Hu, Jiao Teng, Qi Liu, Hangbing Lv, Jordi Suñé and Ming Liu, Nanoscale Research Letters (2015) 10:420

    11.  Chen Hu, Wengang Lu, Wei Ji, Guanghua Yu, Yu Yan, and Jiao Teng, Switchable valley injection into graphenePHYSICAL REVIEW B 92, 115404 (2015)

    12.  Chen HuJiao TengGuanghua YuWengang LuWei JiConditions for quantized anisotropic magnetoresistancePhysical Review B2015, 91(4):1-5

    13.  Wang, LihuaTeng, JiaoLiu, PanHirata, AkihikoMa, EnZhang, ZeChen, MingweiHan, XiaodongGrain rotation mediated by grain boundary dislocations in nanocrystalline platinumNature Communications 5, 4402(2014).

    14.  Liu, Yi-WeiTeng, JiaoZhang, Jing-YanLiu, YangWu, Zheng-LongChen, XiLi, Xu-JingFeng,ChunWang, Hai-ChengLi, Ming-HuaYu, Guang-HuaChemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effectApplied Physics Letters2014, 105(10)

    15. Chong-Jun Zhao, Minhua Li , Jian-Wei Li , LeiDing , Jiao Teng , Guang-Hua Yu, Noise reduction by magnetostaticcoupling in geomagnetic-field sensors, Journal of Magnetism and Magnetic Materials 368 (2014) 328–332 

    • 1.芯片级跨倍频程克尔光频特性的研究2017YFF0206104-01),国家重点研发计划重点专项,2017-07-012020-12-31。(参与)
    • 2.移动式承压类特种设备风险防控与治理关键技术研究(2017YFC0805603-01),国家重点研发计划重点专项,2017-07-012020-12-31。(参与)
    • 3.阻变存储器中的量子各向异性磁电阻效应研究61574169),国家自然科学基金,2016-01-012019-12-31。(参与)
    • 4.磁性随机存储器中调控磁化反转势垒降低临界电流密度研究61474007),国家自然科学基金,2015-01-012018-12-31。(负责)